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|Polarity:||As Marked||Mounting Position:||Any|
high current schottky diode,
schottky barrier diode
IPD70R1K4P7S Series 700V CoolMOS P7 Power Transistor Field Effect MOS Tube
• Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss
• Excellent thermal behavior
• Integrated ESD protection diode
• Low switching losses (Eoss)
• Product validation acc. JEDEC Standard
• Cost competitive technology
• Lower temperature
• High ESD ruggedness
• Enables efficiency gains at higher switching frequencies
• Enables high power density designs and small form factors
Recommended for Flyback topologies for example used in Chargers,
Adapters, Lighting Applications, etc.
|VDS @ Tj=25°C||700||V|
|Eoss @ 400V||0.6||μJ|
|ESD class (HBM)||1C||/|
|Type / Ordering Code||Package||Marking||Related Links|
|IPD70R1K4P7S||PG-TO 252-3||70S1K4P7||see Appendix A|
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Contact Person: Mag